Structural, optical and electrical properties of SnSe4 for phase change memory
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Annealing, amorphous, band gap, Crystallization, I–V measurements, X-R Diffraction.
Abstract
A fabrication progress of phase change memory (PCM) has been reviewed in this paper. Simple structure contents from (Gl, Al, SnSe4, Al) were used. Where both Glass and Phase change material SnSe4 prepared individually, and deposited by using evaporation. In Crystallization kinetics SnSe4 has been investigated for phase change memory applications by using annealing. The SnSe4 shows that a low threshold voltage and current can cause transitions from amorphous to crystalline phase, where that confermed by I–V measurements. Furthermore, the crystallization temperature of the SnSe4 alloys is around 350 °C , where this tempreture acquired due to the phase transition, which has been confirmed by X-R Diffraction results. In addition, band gap has been calculated with UV test and showed that SnSe4 alloy is semiconductor, where the bad gap was 1.65 ev. The Dc measurement illustrates that PCM can transiate from amorphous to crystalline at threshold voltage of 3.2 v with high resistivity of 0.98 Mega ohm, where the crystalline resistivity is 19.3 K ohm. Morover; the pulse test has been investigated to show that the transition process happened with a pulse magnitude 1.6 v and time 33 Micro second.
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