Structural, Optical and Electrical Properties of Snse4 for Phase Change Memory
Article Sidebar
-
Annealing, Amorphous, Band Gap, Crystallization, I–V Measurements, X-R Diffraction
Abstract
A fabrication progress of phase change memory (PCM) has been reviewed in this paper. Simple structure contents from (Gl, Al, SnSe4, Al) were used. Where both Glass and Phase change material SnSe4 prepared individually and deposited by using evaporation. In Crystallization kinetics SnSe4 has been investigated for phase change memory applications by using annealing. The SnSe4 shows that a low threshold voltage and current can cause transitions from amorphous to crystalline phase, which is confirmed by I–V measurements. Furthermore, the crystallization temperature of the SnSe4 alloys is around 350 °C , where this temperature is acquired due to the phase transition, which has been confirmed by X-ray diffraction results. In addition, band gap has been calculated with UV test and showed that SnSe4 alloy is semiconductor, where the bad gap was 1.65 ev. The Dc measurement illustrates that PCM can transiate from amorphous to crystalline at threshold voltage of 3.2 v with high resistivity of 0.98 Mega ohm, where the crystalline resistivity is 19.3 K ohm. Morover; the pulse test has been investigated to show that the transition process happened with a pulse magnitude 1.6 v and time 33 Micro second.
Full text article
References
[1]-B. Fulford. Unsung hero. Forbes, June 24 2002.
[2]-iSuppli Corporation. http://isuppli.com.
[3]-S. Lai. Non{volatile memory technologies: the quest forever lower cost. In IEDM 2008, pages 01{02, 2008.
[4]-G. E. Moore. Cramming more components onto integrated circuits. Electronics, 38(8):114{117, 1965.
[5]-International technical roadmap for semiconductors. www.itrs.net/Links/2008ITRS/Update/2008Update.pdf, 2008.
[6]-Science X network,’’Phase-change material with unexpected optical-reflectivity properties offers fresh perspectives for data storage, 2013. [Online] Available from:http://phys.org/news/2013-01-phase-change-material-uexpected-optical-reflectivity-properties.html#jCp.
[7]-S. Lai, B Current status of the phase change memory and its future,[ in Proc. IEEE Int. Electron Devices Meeting, 2003, pp. 10.1.1–10.1.4.
[8]-International Technology Roadmap for Semiconductors (ITRS), 2009. [Online]. Available: http://public.itrs/net.
Authors
This work is licensed under a Creative Commons Attribution 4.0 International License.
In a brief statement, the rights relate to the publication and distribution of research published in the journal of the University of Sebha where authors who have published their articles in the journal of the university of Sebha should how they can use or distribute their articles. They reserve all their rights to the published works, such as (but not limited to) the following rights:
- Copyright and other property rights related to the article, such as patent rights.
- Research published in the journal of the University of Sebha and used in its future works, including lectures and books, the right to reproduce articles for their own purposes, and the right to self-archive their articles.
- The right to enter a separate article, or for a non-exclusive distribution of their article with an acknowledgment of its initial publication in the journal of Sebha University.
Privacy Statement The names and e-mail addresses entered on the Sabha University Journal site will be used for the aforementioned purposes only and for which they were used.