Tin doping effect on properties of sprayed In2S3 films
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Tin doping effect on properties of sprayed In2S3 films
Abstract
Tin doped In2S3 films have been prepared by the spray pyrolysis (CSP) technique on glass substrates at 350 °C. The Sn doping level was changed with Sn:In (0-2 % in solution). The structural studies reveal that the deposited films are polycrystalline in nature exhibiting cubic structure. The crystallite size decreases from 23.3 to 21 nm and RMS roughness values increases from 16 to 31 nm. The transmission coefficient is about 65-70% in the visible region and 75-90 % in near-infrared region. The band gap energy increases from 2.68 to 2.83 eV for direct transitions. The refractive index values of In2S3:Sn thin films decrease from 2.45 to 2.40 and the extinction coefficient values are in the range 0.01-0.21.
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